SAIN: Self-Attentive Integration Network for Recommendation

With the growing importance of personalized recommendation, numerous recommendation models have been proposed recently. Among them, Matrix Factorization (MF) based models are the most widely used in the recommendation field due to their high performance. However, MF based models suffer from cold start problems where user-item interactions are sparse. To deal with this problem, content based recommendation models which use the auxiliary attributes of users and items have been proposed. Since these models use auxiliary attributes, they are effective in cold start settings. However, most of the proposed models are either unable to capture complex feature interactions or not properly designed to combine user-item feedback information with content information. In this paper, we propose Self-Attentive Integration Network (SAIN) which is a model that effectively combines user-item feedback information and auxiliary information for recommendation task. In SAIN, a self-attention mechanism is used in the feature-level interaction layer to effectively consider interactions between multiple features, while the information integration layer adaptively combines content and feedback information. The experimental results on two public datasets show that our model outperforms the state-of-the-art models by 2.13%Comment: SIGIR 201

Carrier Transport at Metal/Amorphous Hafnium–Indium–Zinc Oxide Interfaces

In this paper, the carrier transport mechanism at the metal/amorphous hafnium–indium–zinc oxide (a-HIZO) interface was investigated. The contact properties were found to be predominantly affected by the degree of interfacial reaction between the metals and a-HIZO; that is, a higher tendency to form metal oxide phases leads to excellent Ohmic contact via tunneling, which is associated with the generated donor-like oxygen vacancies. In this case, the Schottky–Mott theory is not applicable. Meanwhile, metals that do not form interfacial metal oxide, such as Pd, follow the Schottky–Mott theory, which results in rectifying Schottky behavior. The Schottky characteristics of the Pd contact to a-HIZO can be explained in terms of the barrier inhomogeneity model, which yields a mean barrier height of 1.40 eV and a standard deviation of 0.14 eV. The work function of a-HIZO could therefore be estimated as 3.7 eV, which is in good agreement with the ultraviolet photoelectron spectroscopy (3.68 eV). Our findings will be useful for establishing a strategy to form Ohmic or Schottky contacts to a-HIZO films, which will be essential for fabricating reliable high-performance electronic devices